Activities :  Articles published
 
Copyright © 2008 - 2015 Iida Laboratory, Tokyo University of Science. All Rights Reserved.
Publication : 2005 ~ 2014
Look also !!
Look also !!
 
1.     T. Sakamoto, T. Iida, K. Sekiguchi, Y. Taguchi, N. Hirayama, K. Nishio and Y. Takanashi, Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators, Journal of Electronic Materials 43, 3792-3800 (2014). [DOI: 10.1007/s11664-014-3165-7]
 
2.     T. Sakamoto, T. Iida, Y. Ohno, M. Ishikawa, Y. Kogo, N. Hirayama, K. Arai, T. Nakamura, K. Nishio and Y. Takanashi, Stress Analysis and Output Power Measurement of an n- Mg2Si Thermoelectric Power Generator with an Unconventional Structure, Journal of Electronic Materials 43, 1620-1629 (2014). [DOI: 10.1007/s11664-013-2814-6]
 
3.     Y. Oto, T. Iida, T. Sakamoto, R. Miyahara, A. Natsui, K. Nishio, Y. Kogo, N. Hirayama, and Y. Takanashi, Thermoelectric properties
and durability at elevated temperatures of impurity doped n-type Mg2Si, Phys. Status Solidi C 10, No. 12, 1857–1861 (2013). [DOI 10.1002/pssc.201300353]
 
4.     T. Nemoto, T. Iida, J. Sato, T. Sakamoto, N. Hirayama, T. Nakajima and Y. Takanashi, Development of an Mg2Si Unileg Thermoelectric Module Using Durable Sb-Doped Mg2Si Legs, Journal of Electronic Materials 42, 2192-2197 (2013). [DOI: 10.1007/s11664-013-2569-0]
 
5.     Y. Hayatsu, T. Iida, T. Sakamoto, S. Kurosaki, K. Nishio, Y. Kogo, and Y. Takanashi, Fabrication of Large Sintered Pellets of Sb-doped N-type Mg2Si Using a Plasma Activated Sintering Method, Journal of Solid State Chemistry 193, 161-165 (2012). [DOI: 10.1016/j.jssc.2012.07.008]
 
6.     T. Sakamoto, K. Sugiyama, D. Mori, M. Ogi, K. Nishio, Y. Kogo, Y. Takanashi, and T. Iida, Formation of Ni electrodes on sintered N-type Mg2Si using monobloc sintering and electroless plating methods, American Institute of Physics Conf. Proc. 1449, 223-226 (2012). [DOI: 10.1063/1.4731537]
 
7.     K. Nishio, Y. Sawada, K. Arai, T. Sakamoto, Y. Kogo, and T. Iida, Fabrication of thermoelectric modules with Mg2Si and SrRuO3 by the spark plasma sintering method, American Institute of Physics Conf. Proc. 1449, 463-466 (2012). [DOI: 10.1063/1.4731596]
 
8.     Y. Hayatsu, T. Iida, T. Sakamoto, S. Kurosaki, K. Nishio, Y. Kogo, and Y. Takanashi, Fabrication of Large Sintered Pellets of Sb-doped N-type Mg2Si Using a Plasma Activated Sintering Method, American Institute of Physics Conf. Proc. 1449, 187-190 (2012). [DOI: 10.1063/1.4731528]
 
9.     T. Sakamoto, T. Iida, Y. Taguchi, S. Kurosaki, Y. Hayatsu, K. Nishio, Y. Kogo, and Y. Takanashi, Examination of a thermally viable structure for an unconventional uni-leg Mg2Si thermoelectric power generator, Journal of Electronic Materials 41, 1429-1435 (2012). [DOI: 10.1007/s11664-012-1974-0]
 
10.   T. Sakamoto, T. Iida, Y. Honda, M. Tada, T. Sekiguchi, K. Nishio, Y. Kogo, and Y. Takanashi, The use of transition metal silicides to reduce the contact resistance between the electrode and sintered n-type Mg2Si, Journal of Electronic Materials 41, 1805-1810 (2012). [DOI: 10.1007/s11664-012-2073-y]
 
11.   T. Nemoto, T. Iida, J. Sato, T. Sakamoto, T. Nakajima and Y. Takanashi, Power generation characteristics of Mg2Si uni-leg thermoelectric generator, Journal of Electronic Materials 41, 1312-1316 (2012). [DOI: 10.1007/s11664-012-1963-3]
 
12.   K. Mizuno, K. Sawada, T. Nemoto, T. Iida, Development of a Thermal Buffering Device to Cope with Temperature Fluctuations for a Thermoelectric Power Generator, Journal of Electronic Materials 41, 1256-1262 (2012). [DOI: 10.1007/s11664-012-1911-2]
 
13.   K. Arai, M. Matsubara, Y. Sawada, T. Sakamoto, T. Kineri, Y. Kogo, T. Iida, and K. Nishio, Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer, Journal of Electronic Materials 40, 1771-1777 (2012). [DOI: 10.1007/s11664-012-2036-3]
 
14.   H. Udono, K. Nakamori, Y. Takahashi, Y. Ujiie, I.J. Ohsugi, T. Iida, Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75-x, Journal of Electronic Materials 40, 1165-1170 (2011). [DOI: 10.1007/s11664-011-1561-9]
 
15.   T. Sakamoto, T. Iida, N. Fukushima, Y. Honda, M. Tada, Y. Taguchi, Y. Mito, H. Taguchi, and Y. Takanashi, Thermoelectric properties and power generation characteristics of sintered undoped n-type Mg2Si, Thin Solid Films 519, 8528-8531 (2011). [DOI:10.1016/j.tsf.2011.05.031]
 
16.   T. Sakamoto, T. Iida, S. Kurosaki, K. Yano, H. Taguchi, K. Nishio,  and Y. Takanashi, Thermoelectric behavior of Sb- and Al-doped n-type Mg2Si devices under large temperature differences, Journal of Electronic Materials 40, 629-634 (2011).  [DOI:10.1007/s11664-010-1489-5]
 
17.   T. Sakamoto, T. Iida, J. Sato, A. Matsumoto, Y. Honda, T. Nemoto, J. Sato, T. Nakajima, H. Taguchi, and Y. Takanashi, Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu, Journal of Electronic Materials 39, 1708-1713 (2010).
 
18.   T. Nemoto, T. Iida, J. Sato, Y. Oguni, A. Matsumoto, T. Miyata, T. Sakamoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi, Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source, Journal of Electronic Materials 39, 1572-1578 (2010).
 
19.   Y. Honda, T. Iida, T. Sakamoto, S. Sakuragi, Y. Taguchi, Y. Mito, T. Nemoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi, Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy, Materials and Devices for Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol.1218), ed. by J. Yang, G.S. Nolas, K. Koumoto, Y. Grin, (Mater. Res. Soc., 2010), pp.Z05-17.
 
20.   N. Fukushima, T. Iida, M. Akasaka, T. Nemoto, T. Sakamoto, R. Kobayashi, H. Taguchi, K. Nishio and Y. Takanashi, Thermoelectric properties of Sb-doped sintered Mg2Si fabricated using commercial polycrystalline sources, Materials and Devices for Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol.1166), ed. by J. Yang, G.S. Nolas, K. Koumoto, Y. Grin, (Mater. Res. Soc., 2009), pp.N03-21.1-N03-21.6.
 
21.   T. Nemoto, T. Iida, Y. Oguni, J. Sato, A. Matsumoto, T. Sakamoto, T. Miyata, T. Nakajima and Y. Takanashi, Output power characteristics of Mg2Si and the fabrication of a Mg2Si TE module with a uni-leg structure, Materials and Devices for Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol.1166), ed. by J. Yang, G.S. Nolas, K. Koumoto, Y. Grin, (Mater. Res. Soc., 2009), pp.N03-17.1-N03-17.6.
 
22.   H. Taguchi, N. Wakimura, Y. Nakagawa, T. Iida, and Y. Takanashi, InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response, Phisica stetus solidi C 6, pp.1386-1389 (2009).
 
23.   N. Wakimura, Y. Nakagawa, H. Taguchi, T. Iida, and Y. Takanashi, High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors, Performance and Reliability of Semiconductor Devices (Mater. Res. Soc. Proc. Vol.1108), ed. by M. Mastro, J. LaRoche, F. Ren, J-I. Chyi, J. Kim, (Mater. Res. Soc., 2009), pp. A09-02- A09-08.
 
24.   M. Akasaka, T. Iida, A. Matsumoto, K. Yamanaka, Y. Takanashi, T. Imai, and N. Hamada, The thermoelectric properties of bulk crystals of n-, p-type Mg2Si prepared by the vertical Bridgman method, Journal of Applied Physics 104, 013703-1-013703-8 (2008).
 
 
25.   M. Akasaka, T. Iida, Y. Mito, T. Omori, Y. Oguni, S. Yokoyama, K. Nishio, and Y. Takanashi, Fabrication of Mg2Si from a Reused-silicon Source and its Thermoelectric Characteristics, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.15.1- U6.15.6.
 
26.   M. Fukano, T. Iida, K. Makino, M. Akasaka, Y. Oguni, and Y. Takanashi, Crystal growth of Mg2Si by the vertical Bridgman method and the doping effect of Bi and Al on thermoelectric characteristics, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.13.1- U6.13.6.
 
27.   Y. Oguni, T. Nemoto, T. Iida, J. Onosaka, H. Takaniwa, M. Akasaka, J. Sato, and T. Nakajima, and Y. Takanashi, Formation of transition-metal-based ohmic contacts to n-Mg2Si by plasma activated sintering, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U9.16.1- U9.16.6.
 
28.   T. Nemoto, J. Sato, T. Iida, M. Akasaka, T. Nakajima, K. Nishio, and Y. Takanashi, Doping characteristics of silver in Mg2Si(1-x)Gex prepared by plasma activated sintering method, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.14.1- U6.14.6.
 
29.   T. Imai, T. Iida, Y. Miyata, T. Itoh, H. Funashima, Y. Takanashi, and N. Hamada, Design and evaluation of n-type Si1-xGex for thermoelectric-conversion material, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.4.1- U6.4.6.
 
30.   S. Higomo, H. Obara, A. Yamamoto, K. Ueno and T. Iida, Thermoelectric properties of Bi2Te3 based thin films fabricated by pulsed laser deposition, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U9.8.1- U9.8.6.
 
31.   H. Takenouchi, T. Imai, H. Mae, M. Fujimoto, T. Kineri, T. Iida, N. Hamada, T. Watanabe, K. Nishio, Synthesis and thermoelectric properties of Y doped SrTiO3 by modified Pechini’s method, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.11.1- U6.11.6.
 
32.   K. Nishio, K. Fukuda, H. Takenouchi, H. Mae, M. Fujimoto, T. Imai, N. Hamada, T. Iida, T. Kineri, T. Watanabe, Preparation and properties of Srn+1TinO3+1 Ruddlesden-popper homologous series by metal-citric acid complex decomposition method, Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol.1044), ed. by T.P. Hogan, J. Yang , R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008), pp.U6.3.1- U6.3.6.
 
33.   M. Akasaka, T. Iida , T. Baba, S. Kawakami, K. Nishio and Y. Takanashi, Composition dependent thermoelectric properties of sintered Mg2Si1-xGex (x= 0 to 1) initiated from melt-grown polycrystalline source, Thin Solid Films 515, 8237-8241 (2007).
 
34.   T. Inaba, A. Kato, K. Miura, M. Akasaka, T. Iida, Y. Momose and H. Tatsuoka, Preparation and electrical properties of Ca5Si3 and Sr5Si3 powder, Thin Solid Films 515, 8226-8229 (2007).
 
35.   M. Akasaka, T. Iida, J. Soga, N. Kato, T. Sakuma, Y. Higuchi, and Y. Takanashi, Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics, Journal of Crystal Growth 304, 196-201 (2007).
 
36.   S. Kishino, T. Imai, T. Iida, Y. Nakaishi, T. Shinada, Y. Takanashi, and N. Hamada, Bulk crystal growth of semiconducting orthorhombic BaSi2 by the vertical Bridgman method and the optical characteristics, Journal of Alloys and Compounds 428, 22-27 (2007).
 
37.   S. Higomo, H. Obara, A. Yamamoto, K. Ueno, and T. Iida, Fabrication of Bi2Te3 and Bi0.3Sb1.7Te3 thin films and devices on grass substrates by pulsed laser deposition, Proceeding of the IEEE 26th Intl. Conference on Thermoelectrics, 78-81 (2007).
 
38.   T. Nemoto, M. Akasaka, T. Iida, J. Sato, K. Nishio, T. Takei, and Y. Takanashi, Characterization of oxide-incorporated n-type Mg2Si prepared by a spark plasma sintering method, Proceeding of the IEEE 25th Intl. Conference on Thermoelectrics, 552-555 (2006) .
 
39.   T. Baba, T. Iida, M. Akasaka, T. Itoh, Y. Miyata, Y. Takanashi, and S. Sakuragi, Bulk crystalline photovoltaic Si1-xGex (x=0.3~0.8) by using a die-casting growth method, Proceedings 21st European Photovoltaic Solar Energy Conference Dresden Germany, 285-289 (2006)
 
40.   H. Taguchi, H. Murakami, M. Oura, T. Iida, and Y. Takanashi, Analysis of deviation of threshold voltage from hole accumulation model at high excitation, Japanese Journal of Applied Physics 45, 8549-8555 (2006).
 
41.   H. Taguchi, M. Kawaguchi, M. Hayakawa, Y. Nakamura, T. Iida, and Y. Takanashi, Frequency dependence of drain conductance due to hole accumulation in InAlAs/InGaAs high electron mobility transistors, Japanese Journal of Applied Physics 45, 4960-4967 (2006).
 
42.   S. Furuyama, T. Iida, S. Matsui, M. Akasaka, K. Nishio, and Y. Takanashi, Thermoelectric properties of undoped p-type CoSb3 prepared by the vertical Bridgman crystal growth and the spark plasma sintering, Journal of Alloys and Compounds 415, 251-256 (2006).
 
43.   T. Baba, T. Iida, H. Hirahara, T. Itoh, M. Akasaka, and Y. Takanashi, Thermoelectric properties of polycrystalline Si1-xGex grown by die-casting vertical Bridgman growth technique, Materials and Technologies for Direct Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol. 886), ed. by J. Yang, T.P. Hogan, R. Funahashi, G.S. Nolas, (Mater. Res. Soc., 2006), pp.F11.10.1- F11.10.6.
 
44.   T. Sakuma, Y. Higuchi, M. Akasaka, T. Iida, and Y. Takanashi, Thermoelectric properties of Mg2Si1-xCx crystals grown by the vertical Bridgman method, Materials and Technologies for Direct Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol. 886), ed. by J. Yang, T.P. Hogan, R. Funahashi, G.S. Nolas, (Mater. Res. Soc., 2006), pp.F11.13.1- F11.13.6.
 
45.   M. Akasaka, T. Iida, S. Matsui, S. Furuyama, T. Kobayashi and Y. Takanashi, Thermoelectric properties of p-type sponge-like CoSb3 prepared by melt growth and post annealing, Proceeding of the IEEE 24th Intl. Conference on Thermoelectrics, 114-117 (2005).
 
46.   J. Soga, T. Iida, Y. Higuchi, T. Sakuma, K. Makino, M. Akasaka, T. Nemoto and Y. Takanashi, Sticking-free bulk crystal growth of Mg2Si by the vertical Bridgman method and thermoelectric properties, Proceeding of the IEEE 24th Intl. Conference on Thermoelectrics, 95-98 (2005).
 
47.   H. Hirahara, T. Iida, Y. Sugiyama, T. Baba, Y. Takanashi, and S. Sakuragi, Crystal growth of photovoltaic polycrystalline Si1-xGex by die-casting growth, Materials for Photovoltaics (Mater. Res. Soc. Proc. Vol. 836), ed. by R. Guadiana, D. Friedman, M. Durstock, A. Rockett (Mater. Res. Soc., 2005), pp.L5.44.1-L5.44.6.
 
48.   K. Saito, T. Iida, D. Akimoto, A. Nose, Y. Takanashi, S. Sakuragi, H. Nanba, G. Sakuragi, and T. Shimazaki, Characterization of polycrystalline Si silicon sheet grown by die casting combined with the Bridgman technique, Materials for Photovoltaics (Mater. Res. Soc. Proc. Vol. 836), ed. by R. Guadiana, D. Friedman, M. Durstock, A. Rockett (Mater. Res. Soc., 2005), pp.L5.45.1-L5.45.6.
 
49.   S. Matsui, T. Iida, S. Furuyama, M. Noda, M. Ota, and Y. Takanashi, Increase in power factor of melt growth p-type CoSb3 by post-annealing and metal deposition, Proceeding of the IEEE 23rd Intl. Conference on Thermoelectrics, #020.1-#020.4 (2005).
 
50.   Y. Higuchi, T. Iida, M. Noda, M. Yoshinaga, T. Endo, and Y. Takanashi, Crucible-dependent thermoelectric properties of bulk Mg2Si crystals grown by the vertical Bridgman method, Proceeding of the IEEE 23rd Intl. Conference on Thermoelectrics, #123.1-#123.4 (2005).
 
51.   Y. Amagai, A. Yamamoto, T. Iida, and Y. Takanashi, The Effect of Co-substitution on the Thermoelectric Properties of FeGa3, Proceeding of the IEEE 23rd Intl. Conference on Thermoelectrics, #116.1-#116.4(2005).
 
52.   K. Nishio, K. Takahashi, Y. Inaba, M. Sakamoto, T. Iida, K. Tokiwa, Y. Kogo, A. Yasumori, and T. Watanabe, Preparation and thermoelectric properties of high oriented NaxCo2O4-d ceramics by spark plasma sintering method, Proceeding of the IEEE 23rd Intl. Conference on Thermoelectrics, #097.1-#097.4(2005).
 
53.   M. Akasaka, T. Iida, G. Sakuragi, S. Furuyama, M. Noda, S. Matsui, M. Ota, H. Suzuki and Y. Takanashi, Effects of post annealing on thermoelectric properties of p-type CoSb3 grown by vertical Bridgman method, Journal of Alloys and Compounds 386, 228-233 (2005).